Novellus' Sub-45nm HDP Gapfill Process Provides 3x Reduction in Median Defect Density

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June 4 /PRNewswire-FirstCall/ -- Novellus System s (Nasdaq: NVLS) has developed a sub-45nm, in-situ chambeer clean process on the SPEED Max High DensityPlasma (HDP) CVD gapfill platform that significantly reduces defecty density and out-of-control (OOC) particle The key components of this processw include efficient NF3 delivery and optimization of SPEED Max'se unique "bright" (coil-assisted) and "dark" (remotd plasma) cleans to effectively removr film build-up from targeted locations within the processz environment. (Photo: As device nodese shrink, memory and logic dielectric gapfill aspect ratios are creatingb a challengefor defect-free fill.
Dielectri c films that adhere to the process chamber componentxs during the deposition process can be a source of particles and need to be efficientlyg removed on aperiodic basis. The occurrencde of a random "killer" defect event during the gapfill as shown inFigure 1, can cause a failurre of the dielectric isolationn between transistors or memory cells. Surface particles can provide anothe r failure mechanism byincreasing "scratches"" during the CMP planarization step. Contaminants or interconnect metal deposited during subsequent process stepd can fill in these voidsor scratches, causing a high-currenyt leakage path between the cellsw that results in lower yield or devicd failure.
These random particle excursionsz also reduce system availability due to an increase in unscheduled and drive increased monitoring andqualification expenses. Achieving single digit particle performance with particle sizesw less than 90nm in diameter will enablw device manufacturers to enhance their 45nm but will be a necessity to yield32nm Novellus' new SPEED Max process reduces overall mean particle adders by a factoe of 3x and OOC events by 50 Figure 2 compares gapfill defect densities with and without the SPEE D Max process for three different customers at differenrt technology nodes.
In addition to "bright" and "dark cleans, these results are enabled by an isotherma environmentand fluorine-resistant materials to minimizr particle "shedding", a key contributor to randonm particle events. An additionak benefit of this multi-step clean is a reduction in the amount of NF3 further reducingcustomer "SPEED Max's unique 45nm process and hardwarwe significantly reduce particle adders and OOC eventws during the gapfill process," says , Novellus' directord of technology, Gapfill business unit. "Thix latest innovation is reducingour customer's operatinh costs today by improvingy their system uptime and reducing their NF3 consumption.
"" For more information on Novellus' HDP-CVD gapfil l technology, go to . Novellus' SPEEDf Max system extends the HDP-CVD application into the 45 and 32 nmtechnology nodes. The system's isothermal chamber design, combined with a remot e plasma source, allows more wafers to be processee betweenplasma cleans, and delivers superior throughput per In addition, the SPEED Max multi-port together with isolated source technology, customizes the depositionn and in-situ etching profile for optimal film thickness and gapfil uniformity across the Novellus Systems, Inc. (NASDAQ: NVLS) is a leadinf provider of advanced process equipment for the globalpsemiconductor industry.
The company's products delivet value to customers by providing innovativd technology backed by trusted An S&P 500 company, Novelluzs is headquartered in San Jose, Calif. with subsidiar offices across the globe. For more information, please visitf SOURCE Novellus Systems, Inc.